4AK19
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-727 (Z) 1st.
Edition February 1999 Features
• Low on-resistance N Channel: R DS(on) ≤ 0.
5 Ω, VGS = 10 V, ID = 2.
5 A R DS(on) ≤ 0.
6 Ω, VGS = 4 V, ID = 2.
5 A • 4 V gate drive devices.
• High density mounting
Outline
SP-10
3 D 2G 4 G
5 D 6 G
7 D 8 G
9 D
12 34 56 78 9 10
1 S
S 10
1, 10.
Source 2, 4, 6, 8.
Gate 3, 5, 7, 9.
Drain
4AK19
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source
voltage Gate to source
voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Note: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
4 device...