4N65(F,B,H,G,D)
4A mps,650 Volts N-CHANNEL
MOSFET
FEATURE
4A,650V,RDS(ON)=2.
2Ω@VGS=10V/2A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
TO-220AB 4N65
ITO-220AB 4N65F
TO-262 4N65H
TO-263 4N65B
TO-252 4N65G
TO-251 4N65D
Absolute Maximum Ratings(TC=25℃,unless otherwise noted)
Parameter
Symbol
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current Pulsed Drain Current(Note1) Single Pulse Avalanche Energy (Note 2) Avalanche Current(Note1) Repetitive Avalanche Energy (Note1) Reverse Diode dV/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8"from case for 5 se...