Ordering number:ENN6530
P-Channel Silicon
MOSFET
5HP02N
Ultrahigh-Speed Switching Applications
Features
· Low ON-resistance.
· Ultrahigh-speed switching.
· 4V drive.
Package Dimensions
unit:mm 2178
[5HP02N]
5.
0 4.
0 4.
0
0.
45 0.
5
0.
6 2.
0
5.
0
0.
45
0.
44
1
2
3
14.
0
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source
Voltage Gate-to-Source
Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions
1.
3
1.
3
1 : Source 2 : Drain 3 : Gate SANYO : NP
Ratings –50 ±20 –0.
14 –0.
56 0.
4 150 –55 to +150
Unit V V A A W ˚C ˚C
Electrical Ch...