Ordering number : ENN6559
5LN01SP
N-Channel Silicon
MOSFET
5LN01SP
Ultrahigh-Speed Switching Applications
Features
• • •
Package Dimensions
unit : mm 2180
[5LN01SP]
4.
0
3.
0
Low ON-resistance.
Ultrahigh-speed switching.
2.
5V drive.
2.
2
0.
4 0.
5
0.
6
1.
8 15.
0
0.
4
0.
4
1 2 1.
3
0.
7
3
1.
3
0.
7
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source
Voltage Gate-to-Source
Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions
1 : Source 2 : Drain 3 : Gate SANYO : SPA
Ratings 50 ±10 0.
1 0.
4 0.
25 150 --55 to +150 Unit V V A A W °C °C
3.
0 3...