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Ordering number:ENN6130
N-Channel Silicon
MOSFET
5LN02M
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· 2.
5V drive.
Package Dimensions
unit:mm 2158
[5LN02M]
0.
425
0.
15 3
2.
1 1.
250
0 to 0.
1
0.
425
1 2 0.
65 0.
65 2.
0
0.
3 0.
9
0.
6
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source
Voltage Gate-to-Source
Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions
1 : Gate 2 : Source 3 : Drain SANYO : MCP3
Ratings 50 ±10 0.
2 0.
8 0.
15 150 –55 to +150
0.
2
0.
3
Uni...