isc N-Channel
MOSFET Transistor
INCHANGE Semiconductor
5N60
·DESCRIPTION ·Drain Current ID= 5.
6A@ TC=25℃ ·Drain Source
Voltage
: VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·AC Adapter, Battery Charge and SMPS
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
ARAMETER
VALUE UNIT
VDSS
Drain-Source
Voltage (VGS=0)
600
V
VGS
Gate-Source
Voltage
±30
V
ID
Drain Current-continuous@ TC=25℃
5.
6
A
ID(puls)
Pulse Drain Current
20
A
Ptot
Total Dissipation@TC=25℃
100
W
Tj
Max.
Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
P...