VCE IC
= =
1200 V 75 A
IGBT-Die
5SMX 12K1273
Die size: 11.
0 x 11.
0 mm
Doc.
No.
5SYA 1633-00 June 05
• • • • •
Low loss, rugged SPT technology Smooth switching for good EMC Minimized gate charge, short delay times Optimized for paralleling Large bondable emitter area
Maximum rated values
Parameter Collector-emitter
voltage DC collector current Peak collector current Gate-emitter
voltage IGBT short circuit SOA
com
1)
1)
Symbol Conditions VCES IC ICM VGES tpsc Tvj VCC = 900 V, VCEM ≤ 1200 V VGE ≤ 15 V, Tvj ≤ 125 °C Limited by Tvjmax VGE = 0 V, Tvj ≥ 25 °C
min
max 1200 75 150
Unit V A A V µs °C
-20
20 10
Junction temperature
-40
150
Maximum rated values indicat...