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FDS6673BZ P-Channel PowerTrench®
MOSFET
January 2006
FDS6673BZ P-Channel PowerTrench®
MOSFET
-30V, -14.
5A, 7.
8mΩ General Description
This P-Channel
MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Features
Max rDS(on) = 7.
8mΩ, VGS = -10V, ID = -14.
5A Max rDS(on) = 12mΩ, VGS = -4.
5V, ID = -12A Extended VGS range (-25V) for battery applications HBM ESD protection level of 6.
5kV typical (note 3) High performance trench techno...