STS6NF20V
Datasheet
N-channel 20 V, 30 mΩ typ.
, 6 A, 2.
7 V drive, STripFET II Power
MOSFET in an SO-8 package
5 8
Features
Order code
VDS
RDS(on) max.
ID
4 1
STS6NF20V
40 mΩ (@4.
5 V)
20 V
6A
45 mΩ (@2.
7 V)
SO-8
1
S
2
S
8
D
7
D
• Ultra low threshold gate drive • 100% avalanche tested • Low gate charge
Applications
• Switching applications
S
3
G
4
6
D
D
5
Description
This Power
MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge.
This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer appli...