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Ordering number : ENA0457
6LP04MH
P-Channel Silicon
MOSFET
6LP04MH
Features
•
General-Purpose Switching Device Applications
1.
5V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source
Voltage Gate-to-Source
Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.
8mm) Conditions Ratings -60 ±10 --100 --400 0.
6 150 --55 to +150 Unit V V mA mA W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown
Voltage Zero-Gate
Voltage Drain Current Gate-to-Source Leakag...