FQA70N08
August 2000
QFET
FQA70N08
80V N-Channel
MOSFET
General Description Features
• • • • • • • 77.
5A, 80V, RDS(on) = 0.
017Ω @VGS = 10 V Low gate charge ( typical 75 nC) Low Crss ( typical 180 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating
TM
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, com planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited ...