®
74V2G66
DUAL BILATERAL SWITCH
PRELIMINARY DATA
s
s
s
s
s
HIGH SPEED: tPD = 0.
3 ns (TYP.
) at VCC = 5V tPD = 0.
4 ns (TYP.
) at VCC = 3.
3V LOW POWER DISSIPATION: ICC = 1 µA (MAX.
) at TA = 25 oC LOW ”ON” RESISTANCE: RON = 10Ω (TYP.
)AT VCC = 5.
0V II/O=100µA RON = 12Ω (TYP.
)AT VCC = 3.
3V II/O=100µA SINE WAVE DISTORTION 0.
04% (TYP.
) AT VCC=3.
3V f=1KHz WIDE OPERATING
VOLTAGE RANGE: VCC (OPR) = 2V to 5V
SOT23-8L
ORDER CODES PACKAGE SOT23-8L T UBE T& R 74V2G66STR
DESCRIPTION The 74V2G66 is an high-speed
CMOS DUAL BILATERAL SWITCH fabricated in silicon gate C2MOS technology.
It achieves high speed propagation delay and VERY LOW ON resistances while maintaining true
CMOS low power consumption.
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