Part Number | 7532 |
Manufacturer | Mitsubishi |
Title | SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER |
Description | The 7532 Group is the 8-bit microcomputer based on the 740 family core technology. The 7532 Group has a USB, 8-bit timers, and an A-D converter, a... |
Features |
• Basic machine-language instructions .... 69 • The minimum instruction execution time ..... 0.34 µs (at 6 MHz oscillation frequency for the shortest instruction) • Memory size ....... |
File Size | 503.83KB |
Datasheet |
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7536 : MITSUBISHI MICROCOMPUTERS 7536 Group SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER DESCRIPTION The 7536 Group is the 8-bit microcomputer based on the 740 family core technology. The 7536 Group has a USB, 8-bit timers, and an A-D converter, and is useful for an input device for personal computer peripherals. FEATURES • Basic machine-language instructions ....................................... 69 • The minimum instruction execution time .......................... 0.34 µs (at 6 MHz oscillation frequency for the shortest instruction) • Memory size ROM ..................................................................... 8K to 16K bytes RAM ...............................................................
75345S : MOSFET – Power, N-Channel, UltraFET 55 V, 75 A, 7 mW HUF75345G3, HUF75345P3, HUF75345S3S Description These N−Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on−resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low−voltage bus switches, and power management in portable and battery−oper.
75345P : MOSFET – Power, N-Channel, UltraFET 55 V, 75 A, 7 mW HUF75345G3, HUF75345P3, HUF75345S3S Description These N−Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on−resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low−voltage bus switches, and power management in portable and battery−oper.
75345G : MOSFET – Power, N-Channel, UltraFET 55 V, 75 A, 7 mW HUF75345G3, HUF75345P3, HUF75345S3S Description These N−Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on−resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low−voltage bus switches, and power management in portable and battery−oper.
75344P : Data Sheet HUF75344G3, HUF75344P3 October 2013 N-Channel UltraFET Power MOSFET 55 V, 75 A, 8 mΩ These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and batteryoperated p.