HUF75329G3, HUF75329P3, HUF75329S3S
Data Sheet
December 2001
49A, 55V, 0.
024 Ohm, N-Channel UltraFET Power
MOSFETs
These N-Channel power
MOSFETs are manufactured using the innovative UltraFET® process.
This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance.
This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge.
It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low
voltage bus switches, and power management in portable ...