INCHANGE Semiconductor
isc N-Channel
MOSFET Transistor
isc Product Specification
7N50
·DESCRIPTION ·Drain Current ID= 7A@ TC=25℃ ·Drain Source
Voltage-
: VDSS= 500V(Min) ·Fast Switching Speed
·APPLICATIONS ·General purpose power amplifier
·ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source
Voltage (VGS=0)
VGS Gate-Source
Voltage
ID Drain Current-continuous@ TC=25℃
500 ±30
7
V V A
ID(puls)
Pulse Drain Current
40 A
Ptot Total Dissipation@TC=25℃
125 W
Tj Max.
Operating Junction Temperature 150 ℃
Tstg Storage Temperature Range
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 0.
83 ℃/W
...