INCHANGE Semiconductor
com isc N-Channel
Mosfet Transistor
isc Product Specification
8N60
·FEATURES ·Drain Current –ID= 7.
5A@ TC=25℃ ·Drain Source
Voltage: VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.
2Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements
·DESCRITION ·Designed for high efficiency switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL VDSS VGS ID IDM PD Tj Tstg PARAMETER Drain-Source
Voltage Gate-Source
Voltage-Continuous Drain Current-Continuous Drain Current-Single Plused Total Dissipation @TC=25℃ Max.
Operating Junction Temperature Storage Temperature VALUE 600 ±20 7.
5 30 147 150 -55~150 UNIT V V ...