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UTC 9014
NPN EPITAXIAL SILICON TRANSISTOR
PRE-AMPLIFIER, LOW LEVEL & LOW NOISE
FEATURES
*High total power dissipation.
(450mW) *Excellent hFE linearity.
*Complementary to UTC 9015
1
TO-92
1: EMITTER
2: BASE
3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Collector dissipation Junction Temperature Storage Temperature
SYMBOL
VCBO VCEO VEBO Ic Pc Tj TSTG
RATING
50 45 5 100 450 150 -55 ~ +150
UNIT
V V V mA mW °C °C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector-base breakdown
voltage Collector-emitter...