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AP9T16GH/J
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE POWER
MOSFET
Advanced Power Electronics Corp.
▼ Low Gate Charge ▼ Capable of 2.
5V gate drive ▼ Single Drive Requirement ▼ RoHS Compliant G S D
BVDSS RDS(ON) ID
20V 25mΩ 25A
Description
The Advanced Power
MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
G D S
TO-252(H)
G D S
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current, V GS @ 4.
5V Continuous Drain Current, V GS @ 4.
5V Pulse...