INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification 2SA1002
DESCRIPTION ·High Current Capability ·CollectorEmitter Breakdown
Voltage
: V(BR)CEO= 120V(Min.
)
APPLICATIONS ·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO CollectorBase
Voltage
120
V
VCEO CollectorEmitter
Voltage
120
V
VEBO EmitterBase
Voltage
6 V
IC Collector CurrentContinuous Collector Power Dissipation
PC @TC=25℃ Tj Junction Temperature Tstg Storage Temperature
12 A 120 W 150 ℃ 55~150 ℃
isc website:www.
iscsemi.
cn
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INCHANGE Semiconductor
isc Silicon PN...