2SA1020
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1020
Power Amplifier Applications Power Switching Applications
• • • Low Collector saturation
voltage: VCE (sat) = −0.
5 V (max) (IC = −1 A) High-speed switching: tstg = 1.
0 µs (typ.
) Complementary to 2SC2655 Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating −50 −50 −5 −2 900 150 −55 to 150 Unit V V V A mW °C °C
JEDEC JEITA TOSHIBA
TO-92MOD ― 2-5J1A
Electrical Characteristics (Ta = 25°C)
Characteristics Collector...