TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2183
High Current Switching Applications
• Low collector-emitter saturation : VCE(sat) = −1.
0 V（max）
2SA2183
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base
voltage
VCBO −60 V
Collector-emitter
voltage
VCEO −60 V
Emitter-base
voltage
VEBO −7 V
Collector current
DC Pulse
IC ICP
−5.
0 −8.
0
A A
Base current
IB
−0.
5
A
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
PC
Tj Tstg
2 20 150 −55 to 150
W W °C °C
1 : Base 2 : Collector 3 : Emitter
JEDEC
―
Note: Using continuously under heavy loads (e.
g.
the application of high
JEI...