A28F010 1024K (128K x 8)
CMOS FLASH MEMORY
(Automotive)
Y
Automotive Temperature Range b 40 C to a 125 C Flash Memory Electrical Chip-Erase 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm 10 ms Typical Byte-Program 2 Second Chip-Program 1 000 Erase Program Cycles Minimum over Automotive Temperature Range 12 0V g 5% VPP High-Performance Read 120 ns Maximum Access Time
CMOS Low Power Consumption 30 mA Maximum Active Current 300 mA Maximum Standby Current
Y Y
Integrated Program Erase Stop Timer Command Register Architecture for Microprocessor Microcontroller Compatible Write Interface Noise Immunity Features g 10% VCC Tolerance Maximum Latch-Up Immunity through EPI Processing E...