Freescale Semiconductor Technical Data
Document Number: A2I35H060N Rev.
0, 4/2016
RF LDMOS Wideband Integrated Power
Amplifiers
The A2I35H060N wideband integrated circuit is an asymmetrical Doherty designed with on--chip matching that makes it usable from 3400 to 3800 MHz.
This multi--stage structure is rated for 26 to 32 V operation and covers all typical cellular base station modulation formats.
3500 MHz
Typical Doherty Single--Carrier W--CDMA Characterization Performance: PVVrDGoDSb2a=Bb2=il8it1yV.
3odncV,CdIcDC,QDP1FoA.
u=t(1=)5610mWA,AIDvQg.
2,AIn=p1u4t 1SimgnAa,lVPGASR1B==9.
19.
6dBVd@c, 0.
01%
Frequency 3400 MHz 3500 MHz 3600 MHz
Gps (dB) 24.
0 24.
0 23.
7
PAE (%)
32.
5
32.
4
31.
3
ACPR ...