3.
7A, 20V N
N N-Channel Enhancement Mode Field Effect Transistor SMD
Features ■20V, 3.
7A, RDS(ON)=50mΩ @ VGS=4.
5V ■High dense cell design for extremely low RDS(ON) ■Rugged and reliable ■Lead free product is acquired ■SOT-23 Package ■Marking Code: A2SHB Case Material: Molded Plastic.
UL Flammability Classification Rating 94V-0
Internal Block Diagram D
HNM2302ALB(SOT-23) D
HNM2302ALB
N-Channel
MOSFETs
HNM2302ALB N-Channel
Enhancement Mode Field Effect Transistor
2302 SI2302
AO2302 GMS2302
()
G
S SOT-23
S
G SOT-23
DEVICE MARKING: A2SHB
■ MAXIMUM RATINGS Characteristic
Drain-Source
Voltage - Gate- Source
Voltage - Drain Current (continuous) - Drain Current (pulsed)...