A3R1GE4EGF 1Gb DDRII Synchronous DRAM 1Gb DDRII SDRAM Specification A3R1GE4EGF Zentel Electronics Corp.
Revision 1.
0 Apr.
, 2010 Specifications • Density: 1G bits • Organization ⎯ 8M words × 16 bits × 8 banks (A3R1GE4EGF) • Package ⎯ 84-ball FBGA(μBGA) (A3R1GE4EGF) ⎯ Lead-free (RoHS compliant) • Power supply: VDD, VDDQ = 1.
8V ± 0.
1V • Data rate: 800Mbps/667Mbps (max.
) ⎯ 800Μbps/667Mbps(max) • 2KB page size (A3R1GE4EGF) ⎯ Row address: A0 to A12 ⎯ Column address: A0 to A9 • Eight internal banks for concurrent operation • Interface: SSTL_18 • Burst lengths (BL): 4, 8 • Burst type (BT): ⎯ Sequential (4, 8) ⎯ Interleave (4, 8) • /CAS Latency (CL): 3, 4, 5, 6 • Precharge: auto precharge option ...

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