A3R56E40ABF 256Mb DDRII Synchronous DRAM 256Mb DDRII SDRAM Specification A3R56E40ABF Zentel Electronics Corp.
Revision 1.
2 Dec.
, 2012 A3R56E40ABF 256Mb DDRII Synchronous DRAM Specifications • Density: 256M bits • Organization ⎯ 4M words × 16 bits × 4 banks (A3R56E40ABF) • Package ⎯ 84-ball FBGA(μBGA) (A3R56E40ABF) ⎯ Lead-free (RoHS compliant) • Power supply: VDD, VDDQ = 1.
8V ± 0.
1V • Data rate: 1066Mbps/800Mbps(max.
) • 1KB page size (A3R56E40ABF) ⎯ Row address: A0 to A12 ⎯ Column address: A0 to A8 • Four internal banks for concurrent operation • Interface: SSTL_18 • Burst lengths (BL): 4, 8 • Burst type (BT): ⎯ Sequential (4, 8) ⎯ Interleave (4, 8) • /CAS Latency (CL): 3, 4, 5, 6, 7 • P...

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