JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD
SOT-23 Plastic-Encapsulate Transistors
A733LT1
FEATURES Power dissipation PCM : 0.
2 W£¨ Tamb=25¡æ£© Collector current ICM : -0.
15 A Collector-base
voltage V(BR)CBO : -60 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150¡æ
Unit : mm
TRANSISTOR£¨PNP £©
SOT¡ª 23
1.
BASE 2.
EMITTER 3.
COLLECTOR
ELECTRICAL CHARACTERISTICS£¨ Tamb=25¡æ
Parameter Collector-base breakdown
voltage Collector-emitter breakdown
voltage Emitter-base breakdown
voltage
www.
DataSheet4U.
com
unless
Test
otherwise
MIN -60 -50 -5
specified£©
TYP MAX UNIT V V V -0.
1 -0.
1 ¦Ì A ¦Ì A
Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO HFE£¨ 1£© VCE(sat)
...