AF2302N
20V N-Channel Enhancement Mode
MOSFET Features
- Advanced trench process technology - High density cell design for ultra low on-resistance - Excellent thermal and electrical capabilities - Compact and low profile SOT-23 package
Product Summary
VDS = 20V RDS (on), VGS@4.
5V, IDS@3.
6A =65mΩ.
RDS (on), VGS@2.
5V, IDS@3.
1A =95mΩ.
Pin Assignments
3 (Top View) 1.
G 2.
S 3.
D
Pin Descriptions
Pin No.
1 2 3 Pin Name G S D Description Gate Source Drain
1
2
Ordering information
A X Feature F :
MOSFET PN 2302N X X X Package W: SOT23 Lead Free Blank : Normal L : Lead Free Package Packing Blank : Tube or Bulk A : Tape & Reel
Block Diagram
D
S
G
This datasheet contains new product informat...