Alfa-MOS
Technology
AFC6332ES
20V N & P Pair Enhancement Mode
MOSFET
General Description
AFC6332ES, N & P Pair enhancement mode
MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-363 )
Features
N-Channel 20V/0.
7A,RDS(ON)=320mΩ@VGS=4.
5V 20V/0.
6A,RDS(ON)=420mΩ@VGS=2.
5V 20V/0.
5A,RDS(ON)=580mΩ@VGS=1.
8V
P-Channel -20V/-0.
6A, RDS(ON)= 580 mΩ@ VGS =-4.
5V -20V/-0.
5A, RDS(ON)= 780 mΩ@ VGS =-2.
5V -20V/-0.
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