Alfa-MOS
Technology
AFC6606W
60V N & P Pair Enhancement Mode
MOSFET
General Description
AFC6606W, N & P Pair enhancement mode
MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-23-6L )
Features
N-Channel 60V/2.
8A,RDS(ON)=135mΩ@VGS=10V 60V/2.
0A,RDS(ON)=145mΩ@VGS=4.
5V P-Channel -60V/-1.
8A,RDS(ON)=310mΩ@VGS=-10V -60V/-1.
4A,RDS(ON)=340mΩ@VGS=-4.
5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-6L pa...