Alfa-MOS
Technology
AFC6610W
100V N & P Pair Enhancement Mode
MOSFET
General Description
AFC6610W, N & P Pair enhancement mode
MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description (SOT-23-6L)
Features
N-Channel 100V/2.
3A,RDS(ON)=310mΩ@VGS=10V 100V/1.
8A,RDS(ON)=320mΩ@VGS=4.
5V P-Channel -100V/-1.
0A,RDS(ON)=650mΩ@VGS=-10V -100V/-0.
5A,RDS(ON)=700mΩ@VGS=-4.
5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-6L...