IGBT for Automotive Application
1200 V, 40 A
AFGHL40T120RHD
Description This Insulated Gate Bipolar Transistor (IGBT) features a robust
and cost effective Field Stop II Trench construction.
Provides superior performance in demanding switching applications, offering both low on state
voltage and minimal switching loss, which is AEC Q101 qualified offer the optimum performance for both hard and soft switching topology in automotive application.
Features
• Extremely Efficient Trench with Field Stop Technology • Maximum Junction Temperature: TJ = 175°C • Short Circuit Withstand Time 9 ms • 100% of the Parts Tested for ILM (Note 2) • Fast Switching • Tighten Parameter Distribution • AEC−Q101 Qual...