Alfa-MOS
Technology
General Description
AFN1012E, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-523 )
AFN1012E
20V N-Channel Enhancement Mode
MOSFET
Features
20V/0.
6A,RDS(ON)=360mΩ@VGS=4.
5V 20V/0.
5A,RDS(ON)=420mΩ@VGS=2.
5V 20V/0.
4A,RDS(ON)=560mΩ@VGS=1.
8V Low Offset (Error)
Voltage Low-
Voltage Operation High-Speed Circuits Low Battery
Voltage Operation ESD Protected SOT-523 package design
Application
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