Alfa-MOS
Technology
General Description
AFN1304, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-323 )
AFN1304
20V N-Channel Enhancement Mode
MOSFET
Features
20V/1.
8A,RDS(ON)=280mΩ@VGS=4.
5V 20V/1.
5A,RDS(ON)=340mΩ@VGS=2.
5V 20V/1.
2A,RDS(ON)=680mΩ@VGS=1.
8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capabilit...