Alfa-MOS
Technology
General Description
AFN3025S, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TO-252-2L )
AFN3025S
30V N-Channel Enhancement Mode
MOSFET
Features
30V/9.
0A,RDS(ON)=32mΩ@VGS=10V 30V/7.
0A,RDS(ON)=36mΩ@VGS=4.
5V 30V/5.
0A,RDS(ON)=42mΩ@VGS=2.
5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design
Application
DC/DC Converter Load Switch CCFL Inverter Power Management in Notebook Computer
Pin Define
Pin 1...