Alfa-MOS
Technology
General Description
AFN3030, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TO-252-2L )
AFN3030
30V N-Channel Enhancement Mode
MOSFET
Features
30V/12A,RDS(ON)= 30mΩ@VGS=10V 30V/10A,RDS(ON)= 40mΩ@VGS=4.
5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design
Application
Power Management in Desktop Computer DC/DC Converter LCD Display inverter
Pin Define
Pin 1 2 3
Symbol G S D
Ordering Informatio...