Alfa-MOS
Technology
General Description
AFN3609S, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TO-220-3L )
AFN3609S
30V N-Channel Enhancement Mode
MOSFET
Features
30V/35A,RDS(ON)=6mΩ@VGS=10V 30V/20A,RDS(ON)=9mΩ@VGS=4.
5V Super high density cell design for extremely low RDS (ON) TO-220-3L package design
Application
Buck Converter − High Side − Low Side
Synchronous Rectifier − Secondary Rectifier
Pin Define
Pin 1 2 3
Symbol G D S
Ordering Info...