Alfa-MOS
Technology
AFN5510S
100V N-Channel Enhancement Mode
MOSFET
General Description
AFN5510S, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Features
100V/30A,RDS(ON)= 22mΩ@VGS=10V Super high density cell design for extremely low RDS (ON) TO-252-2L package design
Pin Description ( TO-252-2L )
Application
Primary Side Switch POL Synchronous buck converter LED Backlight for LCD TV
Pin Define
Pin 1 2 3
Symbol G S D
Ordering Information
Part Ordering No.
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