Alfa-MOS
Technology
General Description
AFN7002ES, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-723 )
AFN7002ES
60V N-Channel Enhancement Mode
MOSFET
Features
60V/0.
5A , RDS(ON)=2.
4Ω@VGS=10V 60V/0.
05A , R DS(ON)=3.
0Ω@VGS=4.
5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD Protection ( 2KV ) Diode design–in SOT-723 package des...