Alfa-MOS
Technology
AFN7510S
100V N-Channel Enhancement Mode
MOSFET
General Description
AFN7510S, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TO-220-3L )
Features
100V/30A,RDS(ON)= 12mΩ@VGS=10V 100V/15A,RDS(ON)= 18mΩ@VGS=6V Super high density cell design for extremely low RDS (ON) TO-220-3L package design
Application
DC/DC Primary Side Switch POL Synchronous buck converter LED Backlight for LCD TV ndustrial
Pin Define
Pin 1 2 3
Symbol G D...