Alfa-MOS
Technology
General Description
AFN8987W, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-89-3L )
AFN8987W
80V N-Channel Enhancement Mode
MOSFET
Features
80V/4.
6A,RDS(ON)=75mΩ@VGS=10V 80V/3.
6A,RDS(ON)=85mΩ@VGS=4.
5V Super high density cell design for extremely low RDS (ON) SOT-89-3L package design
Application
Motor and Load Control Power Management in White LED System Push Pull Converter LCD TV Inverter & AD/DC Inverter Systems.
Pin De...