Alfa-MOS
Technology
65 General Description
AFN9803S, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TO-220-3L )
AFN9803S
30V N-Channel Enhancement Mode
MOSFET
Features
30V/40A,RDS(ON)=2.
8mΩ@VGS=10V 30V/32A,RDS(ON)=3.
8mΩ@VGS=4.
5V Super high density cell design for extremely low RDS (ON) TO-220-3L package design
Application
OR-ing Server DC/DC
Pin Define
Pin 1 2 3
Symbol G D S
Ordering Information
Part Ordering No.
Part Marking
Package
AFN9...