Alfa-MOS
Technology
General Description
AFP1013E, P-Channel enhancement mode
MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-523 )
AFP1013E
20V P-Channel Enhancement Mode
MOSFET
Features
-20V/-0.
6A, RDS(ON)= 800 mΩ@ VGS =-4.
5V -20V/-0.
5A, RDS(ON)= 950 mΩ@ VGS =-2.
5V -20V/-0.
4A, RDS(ON)= 1250 mΩ@ VGS =-1.
8V Low Offset (Error)
Voltage Low-
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