Alfa-MOS
Technology
General Description
AFP2379, P-Channel enhancement mode
MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-23-3L )
AFP2379
60V P-Channel Enhancement Mode
MOSFET
Features
-60V/-3.
6A,RDS(ON)=135mΩ@VGS=-10V -60V/-2.
6A,RDS(ON)=150mΩ@VGS=-4.
5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design
Application
Power Management in Note book LED Display DC-DC System LCD Pane...