Alfa-MOS
Technology
General Description
AFP3050S, P-Channel enhancement mode
MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TO-252-2L )
AFP3050S
30V P-Channel Enhancement Mode
MOSFET
Features
-30V/-9A,RDS(ON)=60mΩ@VGS=-10V -30V/-7A,RDS(ON)=72mΩ@VGS=-4.
5V -30V/-5A,RDS(ON)=108mΩ@VGS=-2.
5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design
Application
LED Display Load Switch CCFL Inverter Power Management in Notebook Computer,
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