Alfa-MOS
Technology
General Description
AFP7443, P-Channel enhancement mode
MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-363 )
AFP7443
30V P-Channel Enhancement Mode
MOSFET
Features
-30V/-4.
0A,RDS(ON)=63mΩ@VGS=-10.
0V -30V/-3.
2A,RDS(ON)=70mΩ@VGS=-4.
5V -30V/-1.
0A,RDS(ON)=82mΩ@VGS=-2.
5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current ca...