Alfa-MOS
Technology
mGeneral Description
AFP9569, P-Channel enhancement mode
MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TO-252-2L )
AFP9569
40V P-Channel Enhancement Mode
MOSFET
Features
-40V/ -10A,RDS(ON)=100mΩ@VGS= -10V -40V/ -6A,RDS(ON)= 110mΩ@VGS= -4.
5V Super high density cell design for extremely
low RDS (ON) TO-252-2L package design
Application
Backlight Inverter for LCD Display
Full Bridge DC/DC Converter
LED Display Load Switch
CCFL Inverter
...