Alfa-MOS
Technology
General Description
AFP9575S, P-Channel enhancement mode
MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TO-252-2L )
AFP9575S
60V P-Channel Enhancement Mode
MOSFET
Features
-60V/-18A,RDS(ON)= 68mΩ@VGS= -10V -60V/-12A,RDS(ON)= 78mΩ@VGS= -4.
5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design
Application
Backlight Inverter for LCD Display Full Bridge DC/DC Converter LED Display Load Switch CCFL Inverter
Pin Define
Pin 1 2...