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Part Number
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AGR19045EF |
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Manufacturer
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TriQuint Semiconductor |
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Description
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Transistor |
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Published
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Oct 5, 2009 |
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Detailed Description
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AGR19045EF 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Introduction
The AGR19045EF is a 45 W, 28 V N-channel ...
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Datasheet
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AGR19045EF
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Overview
AGR19045EF 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Introduction
The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz— 1990 MHz), global system for mobile communication (GSM/EDGE), time-division multiple access (TDMA), and single-carrier or multicarrier class AB power amplifier applications.
GSM Features
Typical performance over entire GSM band: — P1dB: 50 W typical.
— Power gain @ P1dB = 14.
0 dB continuous wave (CW).
— Efficiency @ P1dB = 54% typical CW.
— Return loss: –10 dB.
Device Performance Features
High-reliability, gold-metalizati...
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