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Part Number
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AGR19060E |
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Manufacturer
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TriQuint Semiconductor |
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Description
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Transistor |
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Published
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Oct 5, 2009 |
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Detailed Description
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AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Introduction
The AGR19060E is a 60 W, 28 V N-channel la...
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Datasheet
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AGR19060E
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Overview
AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Introduction
The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz— 1990 MHz), global system for mobile communication (GSM/EDGE), time-division multiple access (TDMA), and single-carrier or multicarrier class AB power amplifier applications.
GSM Features
Typical performance over entire GSM band: — P1dB: 60 W typical.
— Continuous wave (CW) power gain: @ P1dB = 14.
5 dB.
— CW efficiency @ P1dB = 53% typical.
— Return loss: –12 dB.
Device Performance Features
High-reliability, gold-metalizatio...
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